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DSA2IH0074606.pdf
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HiPerF ETTM Power MOSFETs g ?D UE D f As N-Channel Enhancement-Mode with Fast Intrinsic Diode Type ® V DSS V 70 ^D(cont) Tc = 25°C A 76 ® 67 75 42 50 58 35 40 13 21 24 26 D DS
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ECAD Model
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11n80
204 3B
20n60
42N20
IRFP 260 M
ixtn 44N50
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KS 4400
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