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Partial File Text DIXYS High Voltage IGBT with Diode IXSN 55N120AU1 V CES IC25 vCE(sat) 1200 V 110 A 4V Short Circuit SOA Capability Symbol Test Conditions Tj = 25°Cto150°C Tj = 25° C to 150° C; Continuous
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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