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Insulated Gate Bipolar Transistors (IGBT)
G series (high gain, high speed)
Type = 150°C New IXGH 30N30 T ,, = 25°C A 56 60 60_ 60 76 76 75 100 To = 90"C A 28 30
v CE{Mt)
max. typ. PF 1500 2500 2
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