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HiPerFASTTM IGBT with Diode
IXGH22N50BU1 ix g h 22N50BU i s
VC E S I
= 500 V = 44 A
Preliminary data
Symbol V
Test Conditions T, = 25°C to 150°C T , = 25°C to 150°C; RG E = 1 Mi2 Con