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    DSA00380891.pdf

    • Alliance Semiconductor
    • AS4C1M16E5 ® 5V 1M×16 CMOS DRAM (EDO) Features · 1024 refresh cycles, 16 ms refresh interval · Organization: 1,048,576 words × 16 bits · High speed - RAS-only or CAS-before-RAS refresh Re
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