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    DSACRA000011609.pdf

    • IXYS
    • Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N300HV VCES = 3000V IC110 = 20A VCE(sat) 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110
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    20N30 B20N30 IXBT20N300HV
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