DSACRA000011596.pdf
by IXYS
- High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT12N300 IXBH12N300 VCES = 3000V IC110 = 12A VCE(sat) 3.2V TO-268 (IXBT) G V V V V A A A A V W °C °C °C °C °C Nm/lb.in.
- Original
- Yes
- Yes
- Transferred
- Find it at Findchips.com
