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Standard Power MOSFET
S S = 200 V IRFP 250 VD ^D(cont) = 30 A
R DS,on) = 85 m Q
N-Channel Enhancement Mode
> 8 Symbol V ¥ dss Test Conditions T j =25°C to150°C T j = 25°Cto150°C; RG S= 1 Mi2