DSA2IH0071675.pdf

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Partial File Text n ix Y S MegaMOSTMFET IXTH/IXTM 12N90 VD S S = 900 V lD 2 5 =12 A ^D S (on) " ^ N-Channel Enhancement Mode Symbol V DSS vD G R VQ S v GSM ^D25 d m Test Conditions T j =25°C to 150°C T j
Datasheet Type Scan
ECAD Model

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