DSA2IH0071670.pdf

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Partial File Text MegaMOSTMFET S S = 600 V IXTH/IXTM 20N60 VD lD 2 5 = 20 A ^ D S (o n ) " ß N-Channel Enhancement Mode Symbol VDSS V,,on v GS Test Conditions ^ =25°Cto 150°C 1 Maximum Ratings 600 M£2 6
Datasheet Type Scan
ECAD Model

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