DSAIH00045845.pdf

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Partial File Text w arn H E W L E T T 1 "H M P A C K A R D A T F -10236 0.5-12 GHz Low Noise Gallium Arsenide FET Features · · · · Low Noise Figure: 0.8 dB typical at 4 GHz Bias: Vos = 2V, I ds = 20 mA High As
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