DSA00379440.pdf by Hitachi Semiconductor

Partial File Text 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features · Capable of low voltage operation (VDS = 1.5 to 3 V) · Excellent low noise characteristics (NF =
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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