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    DSAAXSA0009506.pdf

    • PanJit International
    • PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES · RDS(ON), VGS@2.5V,IDS@1mA=7.0 · Advanced Trench Process Technology · High Density Cell Design For Ultra Low On-Resista
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    DSAAXSA0009506.pdf preview Download Datasheet

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