DSA0013571.pdf by United Monolithic Semiconductors

Partial File Text PPH25 0.25µm Power PH-HEMT Process µ Description § § § § § § § "Pseudomorphic" PM-HEMT technology 0.25µm gate length Double heterojunction GaAlAs/GaInAs/GaAlAs/GaAs epitaxial active
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heterojunction PPH* fet pseudomorphic