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    • FLM5964-4C Internally Matched Power GaAs FETs FEATURES · High Output Power: P-idg = 36dBm (Typ.) · · · · · High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impe
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