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    • FLM1011-8C Internally Matched Power GaAs FETs FEATURES · · · · · · High Output Power: P-idg = 38.5dBm (Typ.) High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 10.7 ~ 11.7GHz
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