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    • FLM1011-4C Internally Matched Power GaAs FETs FEATURES · High Output Power: P-idg = 35.5dBm (Typ.) · · · · · High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz
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    1011-4C FLM1011-4C Fujitsu FLM 150
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