DSASW0071481.pdf by NEC

Partial File Text DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES · Super low noise figure and high associated gain NF = 0.4 dB TYP.,
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NEC Ga FET marking L nec v80