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DSASW0071480.pdf
Manufacturer
NEC
Partial File Text
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES ยท Super low noise figure and high associated gain NF = 0.45 dB TYP.,
Datasheet Type
Original
ECAD Model
Part Details
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HS350
NE3508M04
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NE3508M04-T2-A
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NEC Ga FET marking L
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