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DSA00357758.pdf
Manufacturer
STMicroelectronics
Partial File Text
STGB35N35LZ EAS 350 mJ, 350 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop High current capability High voltage clamping feature Gate a
Datasheet Type
Original
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GB35N35LZ
Igbt high voltage low current
STGB35N35LZ
STGB35N35LZ-1
STGB35N35LZT4