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Partial File Text L-Band Medium & High Power GaAs FETs FEATURES · · · · · High Output Power: P-idg = 40.0dBm (Typ.) High Gain: G-j^B = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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