DSAH00430020.pdf by Panasonic

Partial File Text Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 10mJ q High-speed switching: tf = 15ns q No secondary breakdown 1.8±0.1 un
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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