DSAH00429998.pdf by Panasonic

Partial File Text Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS FET s Features q Low ON-resistance RDS(on): RDS(on) = 0.32 (typ.) q High-speed switching: tf = 140ns (typ.) q No secondary breakdown q High
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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