DSAH00429831.pdf by Panasonic

Partial File Text Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No seconda
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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