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DSAH00429738.pdf
Manufacturer
Panasonic
Partial File Text
Power F-MOS FETs 2SK2122 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 3.2mJ q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 4.
Datasheet Type
Original
ECAD Model
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