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    DSAZIHA1000199917.pdf

    • Toshiba
    • 1SS420 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Unit: mm Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta
    • Original
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    DSAZIHA1000199917.pdf preview Download Datasheet

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