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DSAZIHA1000199720.pdf
Manufacturer
Toshiba
Partial File Text
HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit: mm HN2S01F is composed of 3 independent diodes. Low reverse curr
Datasheet Type
Original
ECAD Model
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