DSA00507292.pdf

Manufacturer Renesas Technology
Partial File Text HAT2207C Silicon N Channel MOS FET Power Switching REJ03G1239-0400 Rev.4.00 Jun. 10, 2005 Features · Low on-resistance RDS(on) = 100 m typ.(at VGS = 4.5 V) · Low drive current · High densi
Datasheet Type Original
ECAD Model
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