DSAH00426860.pdf by Panasonic

Partial File Text Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems 3.0±0.15 Unit: mm 12.5 min. · High-power output, high-efficiency: PO = 3.5 mW (typ.)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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