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    DSA00506896.pdf by Renesas Technology

    • RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0100 Rev.1.00 Sep 26, 2005 Features ยท High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% (f = 520 MHz
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