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    DSA0010525.pdf

    • Fairchild Semiconductor
    • NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE
    • Original

    DSA0010525.pdf preview Download Datasheet

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    NPN Transistor 8A TIP102 Darlington transistor
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