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DSAZIHA1000111487.pdf
by International Rectifier
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IRGP4266DPbF IRGP4266D-EPbF  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V   C IC = 90A, TC =100°C tSC ï³ï 5.5µs, TJ(max) = 175°C G
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