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    DSAZIHA1000111487.pdf by International Rectifier

    • IRGP4266DPbF IRGP4266D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Sof... t Recovery Diode VCES = 650V     C IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C G more
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    DSAZIHA1000111487.pdf preview

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