DSAH00422571.pdf by Panasonic

Partial File Text IGBTs 2PG351 2PG351 Insulated Gate Bipolar Transistor s Features q q q Unit : mm 7.0±0.3 3.0±0.2 3.5±0.2 High breakdown voltage : VCES= 400V Large current control possible : IC(peak)=130A
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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