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    DSAZIHA1000111372.pdf by International Rectifier

    • IRFHM3911TRPbF HEXFET® Power MOSFET VDSS 100 115 RDS(on) max (@VGS = 10V) Qg (typical) V m     S 17 ID S G nC 11 (@TC (Bottom) = 25°C
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