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DSAZIHA1000111313.pdf
by International Rectifier
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IRGP6630DPbF IRGP6630D-EPbF  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   C C C IC = 30A, TC =100°C tSC ï³ï 5µs, TJ(max) = 17
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