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DSAIH00038675.pdf
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NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 750 @ lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE7
Datasheet Type
Scan
ECAD Model
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User Tagged Keywords
PC 801 S
transistor H 802