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DSASW00209002.pdf
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Partial File Text
Robustness improvement of high-voltage IGBT by gate control T. Hong, F. Pfirsch*, M. Thoben, R. Bayerer Infineon Technologies, Max-Planck-Str. 5. 59581 Warstein, Germany *Infineon Technologies, Am
Datasheet Type
Original
ECAD Model
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User Tagged Keywords
1000A MOS
high voltage 5kv igbt
ice power 1000a
IGBT 5kV
IGBT collector voltage 5kV
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