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    BDX18 datasheet

    • General Electric
    • Silicon P-N-P epitaxial-base high-power transistor. -100V, 115W. - Pol=PNP / Pkg=TO3 / Vceo=70 / Ic=15 / Hfe=20-70 / fT(Hz)=0.8M / Pwr(W)=117
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