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    DSA2IH00208585.pdf

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    • TOSHIBA {DISCRETE/OPTO} ~5h mT| TCmESO aa077bb 9097250 TOSHIBA (DISCRETE/OPTO) SILICON NPN EPITAXIA L TYPE (PCT PROCESS) __________ (DARLINGTON POWER)________________ Unit in mm
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    2SB678 TOSHIBA 2SB679
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