DSA2IH00198685.pdf

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Partial File Text SILICON NPN EPITAXIAL T Y P E RM ^ ^ ~RN 1^ j 1 Unit in mm + 0.5 2 5 - 0 .3 + 0 .2 5 1.5 - 0 .1 5 , M UTING A N D SWITCHING APPLICATIONS · High Emitter-Base Voltage :V gjjo= 25V (Min.) · Hi
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ECAD Model

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bo 200 TO-236MOD