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DSAAQ0021355.pdf
Manufacturer
Renesas Technology
Partial File Text
Preliminary RJK1055DPB Silicon N Channel Power MOS FET Power Switching Features · · · · High speed switching Low drive current Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V) · Pb-free · H
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Original
ECAD Model
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