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    DASF0046915.pdf

    • Toshiba
    • GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth-generation IGBT FRD included between emitter and col
    • Original
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    DASF0046915.pdf preview Download Datasheet

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    GT15M321

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