DSAEDA00038563.pdf
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Fairchild Semiconductor
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FDC8601
N-Channel Power Trench® MOSFET
100 V, 2.7 A, 109 mΩ
Features
General Description
Ì Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
This N-Channel MOSFET is produced using Fairch
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Original
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