DSA2IH00168785.pdf

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Partial File Text SAMSUNG SEMICONDUCTOR INC 1I,E 0 | 7^4142 0007233 3 | MMBA812M4 PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C )
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ECAD Model

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