DSAEDA000123014.pdf
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IXYS
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Preliminary Technical Information
Trench Gate
Power MOSFET
VDSS
ID25
IXTC96N25T
= 250V
= 40A
⤠31mΩ
Ω
(Electrically Isolated Back Surface)
RDS(on)
N-Channel Enhancement M
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Original
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