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    DASF0034610.pdf

    • Toshiba
    • 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR
    • Original
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    DASF0034610.pdf preview Download Datasheet

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    1SS294
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