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    DSAE0013604.pdf

    • Infineon Technologies
    • IPP086N10N3 G IPB083N10N3 G OptiMOS®3 Power-Transistor IPI086N10N3 G IPD082N10N3 G Product Summary Features V DS 8.2 m ID · Excellent gate charge x R DS(on) product (FOM)
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    DSAE0013604.pdf preview Download Datasheet

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    082N10N 083N10N 086N10 086n10n infineon marking TO-252 IPB083N10N3 G IPD082N10N3 IPD082N10N3 G IPP086N10N3 PG-TO220-3

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