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    DSAZIHA100025417.pdf

    • American Microsemiconductor
    • BUR51S Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)250 V(BR)CBO (V) I(C) Max. (A)60 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (
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