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DSAIH00083894.pdf
Manufacturer
Cree
Partial File Text
CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Creeâs CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency
Type
Original
ECAD Model
Part Details
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